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1 BSC670N25NSFD rev.2.1,2016-12-05 final data sheet superso8 mosfet optimos tm 3power-transistor ,250v features ?n-channel,normallevel ?175crated ?excellentgatechargex r ds(on) product(fom) ?verylowon-resistance r ds(on) ?pb-freeleadplating;rohscompliant ?qualifiedaccordingtojedec 1) fortargetapplication ?halogen-freeaccordingtoiec61249-2-21 ?idealforhigh-frequencyswitchingandsynchronousrectification table1keyperformanceparameters parameter value unit v ds 250 v r ds(on),max 67 m w i d 24 a type/orderingcode package marking relatedlinks BSC670N25NSFD pg-tdson-8 670n25nf - 1) j-std20 and jesd22 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
2 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
3 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet 1maximumratings at t a =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - 24 19 a t c =25c t c =100c pulsed drain current 1) i d,pulse - - 96 a t c =25c avalanche energy, single pulse e as - - 69 mj i d =16a, r gs =25 w reversedioded v /d t d v /d t - - 60 kv/s i d =46a, v ds =125v, d i /d t =1500a/s, t j,max =175c gate source voltage v gs -20 - 20 v - power dissipation p tot - - 150 w t c =25c operating and storage temperature t j , t stg -55 - 175 c - 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - 0.6 1 k/w - thermal resistance, junction - ambient, minimal footprint r thja - - 75 k/w - thermal resistance, junction - ambient, 6 cm 2 cooling area 2) r thja - - 50 k/w - 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 250 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2 3 4 v v ds = v gs , i d =90a zero gate voltage drain current i dss - - 0.1 10 1 100 a v ds =200v, v gs =0v, t j =25c v ds =200v, v gs =0v, t j =125c gate-source leakage current i gss - 1 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - 59 67 m w v gs =10v, i d =24a gate resistance r g - 3.3 5 w - transconductance g fs 24 47 - s | v ds |>2| i d | r ds(on)max , i d =24a 1) see diagram 3 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
4 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 1810 2410 pf v gs =0v, v ds =125v, f =1mhz output capacitance 1) c oss - 103 137 pf v gs =0v, v ds =125v, f =1mhz reverse transfer capacitance 1) c rss - 5.4 - pf v gs =0v, v ds =125v, f =1mhz turn-on delay time t d(on) - 8.0 - ns v dd =125v, v gs =10v, i d =12a, r g,ext =1.6 w rise time t r - 3.6 - ns v dd =125v, v gs =10v, i d =12a, r g,ext =1.6 w turn-off delay time t d(off) - 19 - ns v dd =125v, v gs =10v, i d =12a, r g,ext =1.6 w fall time t f - 4.0 - ns v dd =125v, v gs =10v, i d =12a, r g,ext =1.6 w table6gatechargecharacteristics 2) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 8.2 - nc v dd =125v, i d =24a, v gs =0to10v gate to drain charge q gd - 2.9 - nc v dd =125v, i d =24a, v gs =0to10v switching charge q sw - 5.6 - nc v dd =125v, i d =24a, v gs =0to10v gate charge total 1) q g - 22 30 nc v dd =125v, i d =24a, v gs =0to10v gate plateau voltage v plateau - 4.5 - v v dd =125v, i d =24a, v gs =0to10v output charge q oss - 48 - nc v dd =125v, v gs =0v table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continous forward current i s - - 24 a t c =25c diode pulse current 3) i s,pulse - - 96 a t c =25c diode hard commutation current 4) i s,hard - - 46 a t c =25c, d i f /d t =1500a/s diode forward voltage v sd - 0.9 1.2 v v gs =0v, i f =24a, t j =25c reverse recovery time 1) t rr - 69 138 ns v r =125v, i f =16.1a,d i f /d t =100a/s reverse recovery charge 1) q rr - 153 306 nc v r =125v, i f =16.1a,d i f /d t =100a/s 1) defined by design. not subject to production test. 2) see 2 gate charge waveforms 2 for parameter definition 3) diode pulse current is defined by thermal and/or package limits 4) maximum allowed hard-commutated current through diode at di/dt=1500 a/s 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
5 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 50 100 150 200 0 50 100 150 200 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 50 100 150 200 0 10 20 30 i d =f( t c ); v gs >=10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
6 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 1 2 3 4 5 0 10 20 30 40 50 60 10 v 7 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 10 20 30 0 20 40 60 80 100 4.5 v 5 v 7 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 0 10 20 30 40 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 g fs =f( i d ); t j =25c 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
7 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0 20 40 60 80 100 120 140 160 180 200 220 98% typ r ds(on) =f( t j ); i d =24a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 900 a 90 a v gs(th) =f( t j ); v gs = v ds ;parameter: i d diagram11:typ.capacitances v ds [v] c [pf] 0 40 80 120 160 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 25 c 175 c 25c, 98% 175c, 98% i f =f( v sd );parameter: t j 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
8 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet diagram13:avalanchecharacteristics t av [s] i as [a] 10 0 10 1 10 2 10 3 10 0 10 1 10 2 25 c 100 c 150 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 0 2 4 6 8 10 200 v 125 v 50 v v gs =f( q gate ); i d =24apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 220 230 240 250 260 270 280 290 v br(dss) =f( t j ); i d =1ma 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms
9 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet 5packageoutlines figure1outlinepg-tdson-8,dimensionsinmm 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms ?
10 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet figure2outlinefootprint(tdson-8) 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms ?
11 optimos tm 3power-transistor ,250v BSC670N25NSFD rev.2.1,2016-12-05 final data sheet revisionhistory BSC670N25NSFD revision:2016-12-05,rev.2.1 previous revision revision date subjects (major changes since last revision) 1.2 2016-05-13 rev. 1.2 (preliminary datasheet) 2.0 2016-10-25 release of final version 2.1 2016-12-05 update eas trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie). withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe productofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityofcustomers technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1 2 3 4 5 6 7 8 4 3 2 1 5 6 7 8 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms ?

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